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this is information on a product in full production. august 2013 docid14092 rev 6 1/14 STL150N3LLH5 n-channel 30 v, 0.0014 ? typ., 35 a stripfet? v power mosfet in a powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. 1 2 3 4 powerflat?5x6 am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max. i d STL150N3LLH5 30 v 0.00175 35 a (1) 1. the value is rated according r thj-pcb table 1. device summary order code marking packages packaging STL150N3LLH5 150n3lh5 powerflat? 5x6 tape and reel www.st.com
contents STL150N3LLH5 2/14 docid14092 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid14092 rev 6 3/14 STL150N3LLH5 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 22 v i d (1) 1. the value is rated according r thj-c drain current (continuous) at t c = 25 c 195 a i d (1) drain current (continuous) at t c = 100 c 122 a i d (2) 2. the value is rated according r thj-pcb drain current (continuous) at t pcb = 25 c 35 a i d (2) drain current (continuous) at t pcb =100 c 21.8 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 140 a p tot (1) total dissipation at t c = 25 c 114 w p tot (2) total dissipation at t pcb = 25 c 4 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 1.1 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 31.3 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current, (pulse width limited by t j max ) 17 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 24 v) 300 mj
electrical characteristics STL150N3LLH5 4/14 docid14092 rev 6 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current v ds = 30 v v gs = 0 1a v ds = 30 v, v gs = 0 t c =125 c 10 a i gss gate body leakage current v gs = 22 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.55 2.2 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 17.5 a 0.0014 0.00175 v gs = 4.5 v, i d = 17.5 a 0.0019 0.0024 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f=1 mhz, v gs =0 - 5800 - pf c oss output capacitance - 1147 - pf c rss reverse transfer capacitance -127 - pf q g total gate charge v dd =15 v, i d = 35 a v gs =4.5 v (see figure 14) -40 - nc q gs gate-source charge - 13.4 - nc q gd gate-drain charge - 14.9 - nc r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.1 -
docid14092 rev 6 5/14 STL150N3LLH5 electrical characteristics 14 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15 v, i d = 17.5 a, r g =4.7 , v gs =10 v (see figure 13) - 17.2 - ns t r rise time - 30.8 - ns t d(off) turn-off delay time - 65.8 - ns t f fall time - 47.8 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 35 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 140 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 35 a, v gs =0 -1.1v t rr reverse recovery time i sd = 35 a, di/dt = 100 a/s, v dd = 25 v -43.8 ns q rr reverse recovery charge - 46 nc i rrm reverse recovery current - 2.1 a
electrical characteristics STL150N3LLH5 6/14 docid14092 rev 6 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance 0.01 0.1 1 10 100 i d (a) v ds (v) 0 1 1 1 . 0 hv42710 10 ms 100 ms 1 s t j = 150 c t c = 25 c single pulse operation on this area is limited by max r ds(on) 0.85 0.9 0.95 1 1.05 1.1 bv dss -55 -30 -5 20 45 70 95 120 145 (norm) t j (c) hv42790 0.5 1.0 1.5 2.0 2.5 r ds(on) hv42770 (m ) 0 10 20 30 i d (a) v gs =10v
docid14092 rev 6 7/14 STL150N3LLH5 electrical characteristics 14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 0 2 4 6 8 10 12 0 20 40 60 qg(nc) hv42730 v gs (v) v dd =15 v i d =35 a 0 2000 4000 6000 8000 10000 c(pf) 0 10 20 v ds (v) f=1mhz coss crss ciss hv42760 0.2 0.4 0.6 0.8 1 1.2 v gs(th) (norm) -55 -30 -5 20 45 70 95 120 145 t j (c) hv42740 i d =250a 0.6 0.8 1 1.2 1.4 1.6 r ds(on) hv42750 -55 -30 -5 20 45 70 95 120 145 t j (c) (norm) i d =17.5 a v gs =10 v 0.3 0.4 0.5 0.6 0.7 0.8 v sd (v) hv42780 0 10 20 30 i d (a) t j =-55c t j =25c t j =175c
test circuits STL150N3LLH5 8/14 docid14092 rev 6 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid14092 rev 6 9/14 STL150N3LLH5 package mechanical data 14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL150N3LLH5 10/14 docid14092 rev 6 table 9. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k1.05 1.35
docid14092 rev 6 11/14 STL150N3LLH5 package mechanical data 14 figure 19. powerflat? 5x6 type s-c mechanical data b)b& 7rsylhz 6lghylhz %rwwrpylhz 3lq lghqwlilfdwlrq 3lq lghqwlilfdwlrq
package mechanical data STL150N3LLH5 12/14 docid14092 rev 6 figure 20. powerflat? 5x6 recommended footprint (dimensions are in mm) footprint
docid14092 rev 6 13/14 STL150N3LLH5 revision history 14 5 revision history table 10. document revision history date revision changes 22-oct-2007 1 first release 01-apr-2008 2 document status promoted from preliminary data to datasheet 23-sep-2008 3 v gs value has been changed on table 2 and table 5 12-jun-2009 4 v gs(th) value has been changed on table 5 05-oct-2011 5 section 4: package mechanical data has been updated. minor text changes. 30-aug-2013 6 ? modified: figure 1 and marking in table 1 ? modified: i d value in figure 11 ? updated: figure 13 , 14 , 15 and 16 ? updated: section 4: package mechanical data
STL150N3LLH5 14/14 docid14092 rev 6 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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